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ISPSD 2018 Call for Papers


Topics of interest include but are not limited to High Voltage, Low Voltage, SiC, GaN and other WBG Power Devices, Power ICs, Packaging and Module Technologies.


A PDF abstract should be submitted (link coming July 2017) with the following requirements:

  • A single-page text summary in English (500 words maximum)
  • Up to two additional pages of supporting figures
  • The abstract heading must include: Title, Authors, Affiliations, Address, Phone, Fax, Email
  • The abstract must CLEARLY state: purpose of work, how the work advances prior art, specific results and their significance, up-to-date references
  • Mark the paper’s eligibility for the Charitat Award during submission (paper for which the first author is not more than 30 years of age at the time of the conference). To be eligible, the first author must also present the paper at ISPSD 2018.


Abstract submission deadline is October 15, 2017
Author notification will be sent out by December 22, 2017
Late news submission (limited acceptance) March 1, 2018
Final manuscripts must be submitted before March 15, 2018

General Chair: Professor Z. John Shen
Illinois Institute of Technology, USA

Technical Program Chair: Professor Wai Tung Ng
University of Toronto, Canada