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SHORT COURSE Call for Proposal

A PDF version of the Short Course Call for Proposal is available here.

A mobile-friendly PDF version of the Short Course Call for Proposal is available here.

ISPSD 2018 will offer a number of one-hour short courses to registered attendees. Each short course, delivered by an expert in his or her topic area, addresses the need for an in-depth discussion of important power semiconductor device or power IC design issues, as well as their applications. As a reference, details of past topics covered by ISPSD can be found at ISPSD 2017 and ISPSD 2016, and are summarised below.

Please submit your proposal to the short course chair, Professor Alex Huang of the University of Texas at Austin at Compensation for the short course speaker includes an honorarium of US$2000. Short course speakers are responsible for their own expenses of preparing and presenting the short course, including all travel, lodging, conference registration, and meals.

The submitted proposal should include the following:

  • Contact information for presenting speaker: name, affiliation, mailing address, telephone number, and email address.
  • An abstract of no more than 200 words describing what is to be presented, including whether the topic will be treated in-depth or as a survey, and the level of the intended audience (entry level, intermediate, or advanced). This abstract should be in a form suitable for publication in the ISPSD advance program.
  • A short biography (<200 words) of each speaker.


Proposal submission deadline is October 30, 2017
Speaker notification sent out by December 15, 2017

Short Course Chair: Professor Alex Huang
University of Texas at Austin, USA

Past ISPSD Short Course topics



  • Simulation and experimental characterization of Out-of-SOA events of Power Semiconductor devices
    Prof. Andrea Irace, Ph.D
    University of Naples Federico II, Italy
  • Intelligent Gate Drives for Smart Converters: Technology, Integration & Benefits
    Mr. Bryn Parry
    Amantys Power Electronics Ltd, UK
  • Gallium Oxide Power Device Technologies: Current Status and Prospects
    Dr. Masataka Higashiwaki
    National Institute of Information and Communications Technology, Japan
  • Silicon Carbide Crystal Growth and Applications, History and Current Status
    Dr. Andy Souzis
    II-VI Inc., USA
  • Mission-profile-based power application design for reliability
    Prof. Francesco Iannuzzo
    Aalborg University, Denmark
  • Fundamentals, promise, and future challenges of wide bandgap semiconductor power devices
    Tsunenobu Kimoto
    Kyoto University, Japan
  • Anatomy of a Power MOSFET
    Phil Rutter
    NXP Semiconductors, UK
  • Packaging fast switching semiconductors
    Eckart Hoene
    Fraunhofer IZM Berlin, Germany
  • Comparing Si, SiC and GaN power devices in common power supply applications
    Eric Persson
    Infineon (former IR), USA
  • Challenges for Power Devices in Electrified Drivetrains
    Robert Plikat
    Volkswagen, Germany