TECHNICAL PROGRAM COMMITTEE

Chair

Wai Tung Ng, University of Toronto, Canada

Category 1: High Voltage Power Devices (HV)

Category Chair

Anup Bhalla, United Silicon Carbide, USA

Members

Marina Antoniou, University of Cambridge, UK
Giovanni Breglio, University of Naples Federico II, Italy
Young Chul Choi, ON Semiconductor, Korea (in USA)
Thomas Laska, Infineon Technologies, Germany
Xiaorong Luo, UESTC, China
Tadaharu Minato, Mitsubishi, Japan
Yasuhiko Onishi , Fuji Electric, Japan
Wataru Saito, Toshiba Corporation, Japan
Jan Vobecky, ABB, Switzerland
Chongman Yun, Trinno Technology, Korea
Shuai Zhang, TSMC, China

Category 2: Low Voltage Devices and Power IC Device Technology (LVT)

Category Chair

Phil Rutter, Nexperia, UK

Members

Jun Cai, Texas Instruments, USA
Naoto Fujishima, Fuji Electric, Japan
Dev Alok Girdhar, Intersil, USA
Alexander Hölke, XFAB, Malaysia
Kenya Kobayashi, Toshiba Corporation, Japan
Yoshinao Miura, Renesas Electronics, Japan
Purakh Raj Verma, UMC, Taiwan
Ronghua Zhu, NXP Semiconductors, USA

Category 3: Power IC Design (ICD)

Category Chair

Olivier Trescases, University of Toronto, Canada

Members

David Tsung-Yi Huang, Richtek, Taiwan
Hoi Lee, UT Dallas, USA
Takahiro Mori, Renesas, Japan
Shuichi Nagai, Panasonic, Japan
Nicolas Rouger, CNRS, France
Junichi Sakano, Hitachi, Japan
Weifeng Sun, Southeast University, China
Maarten Swanenberg, NXP Semiconductors, Holland
Budong (Albert) You, Silergy Corp., China
Alessandro Zafarana, STMicroelectronics, Italy

Category 4: GaN and Nitride Base Compound Materials (GaN)

Category Chair

Tom Tsai, TSMC, Taiwan

Members

Kevin Chen, Hong Kong University of Science and Technology, China
Oliver Haeberlen, Infineon Technologies, Austria
Alex Huang, North Carolina State University, USA
Yang Liu, Sun Yat-sen University, China
Peter Moens, ON Semiconductor, Belgium
Sameer Pendharkar, Texas Instruments, USA
Jun Suda, Nagoya University, Japan
Tom Tsai, TSMC, Taiwan
Yasuhiro Uemoto, Panasonic, Japan

Category 5: SiC and Other Materials (SiC)

Category Chair

Peter Losee, GE, USA

Members

Philippe Godignon, CNM institute, Spain
Chih-Fang Huang , National Tsing Hua University, Taiwan
Takeharu Kuroiwa, Mitsubishi Electric, Japan
Chwan Ying Lee, Hestia-Power Inc., Taiwan
Kung-Yen Lee, National Taiwan University, Taiwan
Kevin Matocha, Monolith Semiconductor, USA
Andrei Petru Mihaila, ABB, Switzerland
David Sheridan, Alpha & Omega Semiconductor, USA
Ranbir Singh, GeneSiC, USA
Jun Suda, Nagoya University, Japan
Victor Veliadis
Power America, USA
Yoshiyuki Yonezawa, AIST, Japan
Jon Zhang, Wolfspeed, USA

Category 6: Module and Package Technologies (PK)

Category Chair

Alberto Castellazzi, Nottingham University, UK

Members

Sven Berberich, Semikron, Germany
Josef Lutz, Technical University of Chemnitz, Germany
Tomoyuki Miyoshi, Hitachi, Japan
Hiroshi Tadano, University of Tsukuba, Japan