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PAPER Awards

The 2018 Charitat Young Researcher Award Co-recipients

“1 kV/1.3 mΩ·cm2 Vertical GaN-on-GaN Schottky Barrier Diodes with High Switching Performance”
Shu Yang, Shaowen Han, Rui Li, Kuang Sheng
Zhejiang University, China

“A Smart Gate Driver IC for GaN Power Transistors”
Jingshu Yu, Weijia Zhang, Andrew Shorten, Rophina Li, Wai Tung Ng
University of Toronto, Canada



The 2019 Ohmi Best Paper Award Recipients:

“Deep-P Encapsulated 4H-SiC Trench MOSFETs with Ultra Low RonQgd”
Yasuhiro Ebihara, Aiko Ichimura, Shuhei Mitani, Masato Noborio, Yuichi Takeuchi , Shoji Mizuno, Toshimasa Yamamoto, Kazuhiro Tsuruta
Denso Corp., Japan