A PDF version of the Technical Program is available here.
A PDF version of the Technical Program is available here.
Technical Program At-A-Glance
Detailed Technical Program (Tentative) |
Monday, May 14, 2018 |
|
Opening Remarks |
|
Red Laquer Room (4th level) |
|
08:30 |
John Shen, Illinois Institute of Technology, USA |
Red Laquer Room (4th level) |
|
Chair: John Shen, Illinois Institute of Technology, USA
Co-Chair: K. Sheng, Zhejiang University, China |
08:50 |
PL1-1 |
ISPSD: A 30 Year Journey in Advancing Power Semiconductor Technology
Ayman Shibib, Leo Lorentz, Hiromichi Ohashi
|
09:35 |
PL1-2 |
Silicon, GaN and SiC: There’s Room for All
Larry Spaziani, GaN Systems Inc., Canada |
10:20 |
Coffee Break |
|
Salon 4-9 (3rd level) |
Red Laquer Room (4th level) |
|
Chair: Wai Tung Ng, University of Toronto, Canada
Co-Chair: Kevin Chen, Hong Kong University of Science & Technology |
10:40 |
PL2-1 |
Si Wafer Technology for Power Devices: A Review and Future Directions
Norihisa Machida, SUMCO, Japan |
11:25 |
PL2-2 |
The Future of Power Semiconductors: an EU Perspecitve
Bert De Colvenaer, ECSEL, Belgium |
S1 Superjunction MOS, Diodes and IGBTs |
|
Red Laquer Room (4th level) |
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Chair: Young Chul Choi, ON Semiconductor, Korea
Co-Chair: Marina Antoniou, University of Cambridge, UK |
14:00 |
1-1 |
IGBT with Superior Long-Term Switching Behavior by Asymmetric Trench Oxide
Christian Sandow, Philip Brandt, Hans-Peter Felsl, Franz-Josef Niedernostheide,
Frank Pfirsch, Francisco Santos, Hans-Joachim Schulze, André Stegner, Frank
Umbach, Wolfgang Wagner,
Infineon Technologies AG, Germany |
14:25 |
1-2 |
6.5 kV Field Shielded Anode (FSA) Diode Concept with 150°C Maximum Operational
Temperature Capability
Boni Boksteen, Charalampos Papadopoulos, Daniel Prindle, Arnost Kopta, Chiara
Corvasce,
ABB Semiconductors, Switzerland |
14:50 |
1-3 |
Low Noise Superjunction MOSFET with Integrated Snubber Structure
Hiroaki Yamashita, Syotaro Ono, Hisao Ichijo, Masataka Tsuji, Masaru Izumisawa,
Wataru Saito,
Toshiba Electronic Devices and Storage Corp., Japan |
15:15 |
1-4 |
Breakthrough of Drain Current Capability and on-Resistance Limits by Gate-
Connected Superjunction MOSFET
Wataru Saito,
Toshiba Electric Devices & Storage Corp., Japan |
15:40 |
Coffee Break |
|
Salon 4-9 (3rd level) |
Red Laquer Room (4th level) |
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Chair: Peter Losee, General Electric, USA
Co-Chair: Andrei Petru Mihaila, ABB, Switzerland |
16:00 |
2-1 |
Investigation of Threshold Voltage Stability of SiC MOSFETs
Dethard Peters, Thomas Aichinger, Thomas Basler, Gerald Rescher, Katja Puschkarsky, Hans Reisinger,
Infineon Technologies AG, Germany |
16:25 |
2-2 |
Deep-P Encapsulated 4H-SiC Trench MOSFETs with Ultra Low RonQgd
Yasuhiro Ebihara, Aiko Ichimura, Shuhei Mitani, Masato Noborio, Yuichi Takeuchi, Shoji Mizuno, Toshimasa Yamamoto, Kazuhiro Tsuruta,
Denso Corp., Japan |
16:50 |
2-3 |
Influence of the Off-State Gate-Source Voltage on the Transient Drain Current
Response in SiC MOSFETs
Christian Unger, Martin Pfost,
TU Dortmund University, Germany |
17:15 |
2-4 |
Reduction of RonA Retaining High Threshold Voltage in SiC DioMOS by Improved
Channel Design
Atsushi Ohoka, Masao Uchida, Tsutomu Kiyosawa, Yoshihiko Kanzawa, Tetsuzo
Ueda,
Automotive & Industrial Systems Co., Panasonic Corp., Japan |
17:40 |
2-5 |
Avalanche Ruggedness and Reverse-Bias Reliability of SiC MOSFET with Integrated
Junction Barrier Controlled Schottky Rectifier
Cheng-Tyng Yen, Fu-Jen Hsu, Chien-Chung Hung, Chwan-Ying Lee, Lurng-Shehng
Lee, Ya-Fang Li, Kuo-Ting Chu,
Hestia Power Inc., Taiwan |
18:15 |
Reception |
|
Empire Room (lobby level) |
S3 Lateral Devices: Reliability |
|
Red Laquer Room (4th level) |
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Chair: Phil Rutter, Nexperia, UK
Co-Chair: Jun Cai, Texas instruments, USA |
08:30 |
3-1 |
Comprehensive Investigation on Mechanical Strain Induced Performance Boosts in
LDMOS
Wangran Wu, Siyang Liu, Jing Zhu, Weifeng Sun,
Southeast University, China |
08:55 |
3-2 |
Investigation on Total-Ionizing-Dose Radiation Response for High Voltage Ultra-Thin
Layer SOI LDMOS
Xin Zhou, Lingfang Zhang, Ming Qiao, Zhangyi'An Yuang, Lei Shu, Ping Luo , Zhaoji
Li, Bo Zhang,
University of Electronic Science and Technology of China, China |
09:20 |
3-3 |
Electromigration Current Limit Relaxation for Power Device Interconnects
Jungwoo Joh, Young-Joon Park, Srikanth Krishnan, Kim Christensen, Jayhoon
Chung,
Texas Instruments, USA |
09:45 |
3-4 |
Performance and Reliability Insights of Drain Extended FinFET Devices for High
Voltage SoC Applications
Sampath Kumar Boeila, Milova Paul, Harald Gossner, Mayank Shrivastava,
Indian
Institute of Science, India |
10:10 |
Coffee Break |
|
Salon 4-9 (3rd level) |
Red Laquer Room (4th level) |
|
Chair: Nicolas Rouger, CNRS, France
Co-Chair: Budong (Albert) You, Silergy Corp., China |
10:30 |
4-1 |
High-Speed, High-Reliability GaN Power Device with Integrated Gate Driver
Gaofei Tang, Alex M.-H. Kwan, R.-Y. Su, F.-W. Yao, Y.-M. Lin, J.-L. Yu, Thomas
Yang, Chan-Hong Chern, Tom Tsai, H. C. Tuan, Alexander Kalnitsky, Kevin J.
Chen,
Hong Kong University of Science and Technology, Hong Kong, China |
10:55 |
4-2 |
A 600V High-Side Gate Drive Circuit with Ultra-Low Propagation Delay for
Enhancement Mode GaN Devices
Yangyang Lu, Jing Zhu, Weifeng Sun, Yunwu Zhang, Kongsheng Hu, Zhicheng Yu,
Jing Leng, Shikang Cheng, Sen Zhang,
Southeast University, China |
11:20 |
4-3 |
A Smart Gate Driver IC for GaN Power Transistors
Jingshu Yu, Weijia Zhang, Andrew Shorten, Rophina Li, Wai Tung Ng,
University of Toronto, Canada |
11:45 |
4-4 |
CMOS Bi-Directional Ultra-Wideband Galvanically Isolated Die-to-Die Communication
Utilizing a Double-Isolated Transformer
Mahdi Javid, Arizona State University, Karel Ptacek, ON Semiconductor,
Richard Burton, Atomera Inc., Jennifer Kitchen, Arizona State University, USA |
Red Laquer Room (4th level) |
|
Chair: Kevin Chen, Hong Kong University of Science and Technology, Hong Kong, China
Co-Chair: Oliver Haeberlen, Infineon Technologies, Austria |
13:30 |
5-1 |
Dynamic-Ron Control via Proton Irradiation in AlGaN/GaN Transistors
Alaleh Tajalli, Arno Stockman, Matteo Meneghini, Samir Mouhoubi, Abhishek
Banerjee, Simone Gerardin, Marta Bagatin, Alessandro Paccagnella, Enrico Zanoni,
Marnix Tack, Peter Moens, Gaudenzio Meneghesso,
University of Padova, Italy |
13:55 |
5-2 |
Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-GaN AlGaN/GaN
HEMTs: the Role of Electron-Trapping and Hole-Injection
Yuanyuan Shi, Qi Zhou, Qian Cheng, Pengcheng Wei, Liyang Zhu, Dong Wei,
Anbang Zhang, Wanjun Chen, Bo Zhang,
University of Electronic Science and
Technology of China, China |
14:20 |
5-3 |
GaN-on-Si Lateral Power Devices with Symmetric Vertical Leakage : the Impact of
Floating Substrate
Hanyuan Zhang, Shu Yang, Kuang Sheng,
Zhejiang University, China |
14:45 |
5-4 |
Short Circuit Robustness Analysis of New Generation Enhancement-Mode pGaN
Power HEMTs
Michele Riccio, Gianpaolo Romano, Giorgia Longobardi, Luca Maresca, Giovanni
Breglio, Andrea Irace,
University of Naples Federico II, Italy |
15:10 |
Coffee Break |
|
Salon 4-9 (3rd level) |
15:30 |
Poster Session 6: High Voltage |
|
Salon 4-9 (3rd level) |
15:30 |
Poster Session 7: GaN |
|
Salon 4-9 (3rd level) |
15:30 |
Poster Session 8: Packaging |
|
Salon 4-9 (3rd level) |
18:30 |
AdCom Dinner (by Invitation) |
Red Laquer Room (4th level) |
|
Chair: Peter Moens, ON Semiconductor, Belgium
Co-Chair: Yang Liu, Sun Yat-sen University, China |
08:30 |
9-1 |
1 kV/1.3 mΩ·cm2 Vertical GaN-on-GaN Schottky Barrier Diodes with High Switching
Performance
Shu Yang, Shaowen Han, Rui Li, Kuang Sheng,
Zhejiang University, China |
08:55 |
9-2 |
Reverse-Blocking AlGaN/GaN Normally-Off Mis-HEMT with Double-Recessed Gated
Schottky Drain
Jiacheng Lei, Jin Wei, Gaofei Tang, Kevin J. Chen,
Hong Kong University of
Science and Technology, Hong Kong, China |
09:20 |
9-3 |
Recess-Free AlGaN/GaN Lateral Schottky Barrier Controlled Schottky Rectifier with
Low Turn-on Voltage and High Reverse Blocking
Xuanwu Kang, Xinhua Wang, Sen Huang, Jinhan Zhang, Jie Fan, Shuo Yang,
Yuankun Wang, Yingkui Zheng, Ke Wei, Xinyu Liu,
IMECAS, China |
09:45 |
9-4 |
|
10:10 |
Coffee Break |
|
Salon 4-9 (3rd level) |
10:10 |
Poster Session 10: Low Voltage Technology |
|
|
Salon 4-9 (3rd level) |
10:10 |
Poster Session 11: IC Design |
|
Salon 4-9 (3rd level) |
10:10 |
Poster Session 12: SiC |
|
Salon 4-9 (3rd level) |
S13 SiC Reliability and Ruggedness |
|
Red Laquer Room (4th level) |
|
Chair: Kevin Matocha, Monolith Semiconductor, USA
Co-Chair: Yoshiyuki Yonezawa, AIST, Japan |
13:30 |
13-1 |
Robustness Improvement of Short-Circuit Capability by SiC Trench-Etched Double-
Diffused MOS (Ted MOS)
Naoki Tega, Kazuki Tani, Digh Hisamoto, Akio Shima,
Hitachi Ltd. Japan |
13:55 |
13-2 |
High-Temperature Validated SiC Power MOSFET Model for Flexible Robustness
Analysis of Multi-Chip Structures
Michele Riccio, Vincenzo D'Alessandro, Gianpaolo Romano, Alberto Castellazzi,
Luca Maresca, Giovanni Breglio, Andrea Irace,
University of Naples Federico II, Italy |
14:20 |
13-3 |
Reliability Investigation with Accelerated Body Diode Current Stress for 3.3 kV 4HSiC
MOSFETs with Various Buffer Layer Thickness
Yuji Ebiike,
Mitsubishi Electric Corporation, Japan |
14:45 |
13-4 |
Dynamic Switching and Short Circuit Capability of 6.5kV Silicon Carbide MOSFETs
Lars Knoll, Andrei Mihaila, Enea Bianda, Lukas Kranz, Marco Bellini, Stephan
Wirths, Charalampos Papadopoulus,
ABB Switzerland Corporate Research,
Switzerland |
15:10 |
Coffee Break |
|
Salon 4-9 (3rd level) |
S14 Packaging and Enabling Technologies |
|
Red Laquer Room (4th level) |
|
Chair: Tomoyuki Miyoshi, Hitachi, Japan
Co-Chair: Alberto Castellazzi, Nottingham University, UK |
15:30 |
14-1 |
Improvement of Power Cycling Reliability of 3.3kV Full-SiC Power Modules with
Sintered Copper Technology for Tj,max=175˚C
Kan Yasui, Seiichi Hayakawa, Masato Nakamura, Daisuke Kawase, Takashi
Ishigaki, Kouji Sasaki, Toshihito Tabata, Masakazu Sagawa, Hiroyuki Matsushima,
Toshiyuki Kobayashi, Toshiaki Morita,
Hitachi Power Semiconductor Device Ltd.,
Japan |
15:55 |
14-2 |
Enhanced Breakdown Voltage and Low Inductance of All-SiC Module
Motohito Hori, Yuichiro Hinata, Katsumi Taniguchi, Yoshinari Ikeda, Tomoyuki
Yamazaki,
Fuji Electric Co. Ltd., Japan |
16:20 |
14-3 |
Dynamic Performance Analysis of a 3.3 kV SiC MOSFET Half-Bridge Module with
Parallel Chips and Body-Diode Freewheeling
Abdallah Hussein, Bassem Mouawad, Alberto Castellazzi,
University of Nottingham,
UK |
16:45 |
14-4 |
Power Cycling Reliability Results of GaN HEMT Devices
Jörg Franke, Tom Winkler, Josef Lutz,
Chemnitz University of Technology, Germany |
17:10 |
14-5 |
Individual Device Active Cooling for Enhanced System-Level Power Density and
More Uniform Temperature Distribution
Yuqi Zeng, Abdallah Hussein, Alberto Castellazzi,
University of Nottingham, UK |
18:30 |
Banquet |
|
Grand Ballroom (4th level) |
S15 Novel Device Structures |
|
Red Laquer Room (4th level) |
|
Chair: Dev Alok Girdhar, Intersil, USA
Co-Chair: |
08:30 |
15-1 |
Non-Full Depletion Mode of the Lateral Superjunction and its Experimental
Realization in the SOI Devices
Wentong Zhang, Song Pu, Chunlan Lai, Li Ye, Shikang Cheng, Sen Zhang, Boyong
He, Zhuo Wang, Xiaorong Luo, Zhaoji Li, Ming Qiao, Bo Zhang,
University of
Electronic Science and Technology of China, China |
08:55 |
15-2 |
Cathode Short Structure to Enhance the Robustness of Bidirectional Power
MOSFETs
Tanuj Saxena, Vishnu Khemka, Moaniss Zitouni, Raghu Gupta, Ganming Qin,
Philippe Dupuy, Mark Gibson,
NXP Semiconductor Inc., USA |
09:20 |
15-3 |
40V to 100V NLDMOS Built on Thin Box SOI with High Energy Capability, State of
the Art Rdson/BVdss and Robust Performance
Hao Yang, Martin Pfost, Poh Ching Sim, Madelyn Liew, Alexander Hoelke, Uwe
Eckoldt,
X-FAB Semiconductor Foundries AG, Germany |
09:45 |
15-4 |
Novel Integration Techniques of “Recessed” High Voltage Field-Drift MOSFET with
HK/MG RMG Technology
Chang Po Hsiung, Ping Hung Chiang, Shih Chieh Pu, Chia Ling Wang, Chia Wen
Lu, Kuan Liang Liu, Kai Kuen Chang, Ching Chung Yang, Nien Chung Lee, Shih Yin
Hsiao, Wen Fang Lee, Chih Chong Wang,
United Microelectronics Corporation
(UMC), Taiwan |
10:10 |
Coffee Break |
|
Salon 4-9 (3rd level) |
Red Laquer Room (4th level) |
|
Chair: Thomas Laska, Thomas Laska, Infineon Technologies, Germany
Co-Chair: Jan Vobecky, ABB, Switzerland |
10:30 |
16-1 |
A Novel Carrier Accumulating Structure for 1200V IGBTs Without Negative Capacitance and Decreasing Breakdown-Voltage
Md Tasbir Rahman, Keisuke Kimura, Takeshi Fukami, Yasuki Futamura, Kimimori Hamada,
Toyota Motor Corporation, Japan |
10:55 |
16-2 |
Study on the Improved Short-Circuit Behavior of Narrow Mesa Si-IGBTs with Emitter Connected Trenches
Katsumi Eikyu, Atsushi Sakai, Hitoshi Matsuura, Yoshito Nakazawa, Yutaka Akiyama, Yasuo Yamaguchi,
Renesas Electronics Corp., Japan |
11:20 |
16-3 |
An Advanced Soft Punch Through Buffer Design for Thin Wafer IGBTs Targeting Lower Losses and Higher Operating Temperatures Up to 200°C
Elizabeth Buitrago, Athanassios Mesemanolis, Charalampos Papadopoulos, Chiara Corvasce, Jan Vobecky, Munaf Rahimo,
ABB Semiconductor, Switzerland |
11:45 |
16-4 |
Investigation of the Mechanism of Gate Voltage Oscillation in 1.2kV IGBT Under Short Circuit Condition
Takuo Kikuchi, Kazutoshi Nakamura, Kazuto Takao,
Toshiba Corporation, Japan |
Red Laquer Room (4th level) |
|
Chair: Olivier Trescases, University of Toronto, Canada
Co-Chair: Alberto Castellazzi, Nottingham University, UK |
13:30 |
17-1 |
Design of LED Driver ICs for High- Performance Miniaturized Lighting Systems
P.K.T. Mok,
The Hong Kong University of Science and Technology, Hong Kong, China |
13:55 |
17-2 |
High Voltage Capacitive Voltage Conversion
Randall L. Sandusky,
Helix Semiconductors, USA |
14:20 |
17-3 |
Chip-Scale Cooling of Power Semiconductor Devices
Feng Zhou, Ki Wook Jung, Yuji Fukuoka, Ercan M. Dede,
Toyota Research Institute of North America, USA |
14:45 |
17-4 |
An Innovated Silicon Power Device (i-Si) through Time and Space Control of a Stored Carrier (TASCs)
Mutsuhiro Mori, Tomoyuki Miyoshi, Tomoyasu Furukawa, Yujiro Takeuchi, Yusuke Hotta, Masaki Shiraishi,
Hitachi, Ltd., Japan |
15:10 |
Closing |
|
Red Laquer Room (4th level) |
18:30 |
TPC Dinner (by Invitation) |